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參數(shù)資料
| 型號： | 2SK3889-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 143K |
| 代理商： | 2SK3889-01L |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous Drain Current
ID
9
Pulsed Drain Current
ID(puls]
±36
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
9
Non-Repetitive
EAS
462.3
Maximum Avalanche Energy
Repetitive
EAR
16.5
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
165
1.67
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3889-01L,S,SJ
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=4.5A
VGS=10V
ID=4.5A
VDS=25V
VCC=300V ID=4.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.758
75
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=9A
VGS=10V
IF=9A VGS=0V Tch=25°C
IF=9A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.0
5.0
25
250
100
0.82
1.00
4.5
9.0
950
1425
130
195
6.0
9.0
16
24
6.0
9.0
33
50
5.5
8.3
25
38
10
15
8.0
12.0
1.10
1.50
860
7.0
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 600V
Note *4
Tc=25°C
Ta=25°C
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Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
See to P4
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH,
VCC=60V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=50A/s,VCC BVDSS,Tch 150°C
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