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參數資料
| 型號： | 2SK3927-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 143K |
| 代理商： | 2SK3927-01S |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
250
VDSX
220
Continuous Drain Current
ID
34
Pulsed Drain Current
ID(puls]
±136
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
34
Non-Repetitive
EAS
665.7
Maximum Avalanche Energy
Repetitive
EAR
27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Peak Diode Recovery -di/dt
-di/dt
100
Max. Power Dissipation
PD
270
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3927-01L,S,SJ
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=17A
VGS=10V
ID=17A
VDS=25V
VCC=48V ID=17A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
mA
nA
m
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
75
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=125V
ID=34A
VGS=10V
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
A/s
W
°C
250
3.0
5.0
25
2.0
100
85
110
13
26
1850
2800
220
330
21
32
20
30
19
29
56
85
19
29
56
85
20
30
19
29
1.00
1.50
140
250
0.5
1.25
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Tc=25°C
Ta=25°C
=
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Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=100A/
s,VCC BVDSS,Tch 150°C
Note *5:IF -ID, dv/dt=5kV/
s,VCC BVDSS,Tch 150°C
=
<
=
<
=
<
=
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=
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=
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See to P4
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