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參數資料
| 型號： | 2SK4028 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結型場效應晶體管的阻抗流腦轉爐 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 130K |
| 代理商： | 2SK4028 |
Data Sheet D17529EJ1V0DS
3
2SK4028
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
I
D
μ
A
0
2
4
6
8
10
Pulsed
0.10 V
V
GS
= 0 V
0.05 V
0.20 V
0.15 V
0.05 V
1000
800
600
400
200
0
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
G
μ
A
40
30
20
10
0
10
20
30
40
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
V
GS
- Gate to Source Voltage - V
I
D
μ
A
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
i
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
|
f
V
G
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
μ
A
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