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參數資料
| 型號： | 2SK4058-S15-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, MP-3-B, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 134K |
| 代理商： | 2SK4058-S15-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4058
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18033EJ1V0DS00 (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2006
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4058-S15-AY
Note
TO-251(MP-3-b)
2SK4058-ZK-E1-AY
Note
TO-252 (MP-3ZK)
2SK4058-ZK-E2-AY
Note
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb
inexternal electrode.)
DESCRIPTION
The 2SK4058 is N-channel MOSFET device that features a
low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 8.0 m
Ω MAX. (VGS = 10 V, ID = 24 A)
Low QGD: QGD = 6.5 nC TYP.
4.5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (pulse)
Note1
ID(pulse)
±144
A
Total Power Dissipation (TC = 25°C)
PT1
29
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
22
A
Single Avalanche Energy
Note2
EAS
48.4
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100μH
(TO-251)
(TO-252)
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| 2SK4058-S15-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4058-ZK-E1-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4058(1)-S27-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4058-ZK-E1-AY | 功能描述:MOSFET N-CH 25V TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4058-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4059TK | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For ECM |
| 2SK4059TV | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For ECM |
| 2SK405O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | 8A I(D) | TO-247VAR |
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