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參數(shù)資料
| 型號： | 2SK4066 |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 60 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMP, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 44K |
| 代理商： | 2SK4066 |
2SK4066
No. A0225-1/5
Features
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
100
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
400
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C90
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
850
mJ
Avalanche Current *2
IAV
70
A
Note : *1 VDD=30V, L=200H, IAV=70A
*2 L
≤200H, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=50A
51
85
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=50A, VGS=10V
3.6
4.7
m
RDS(on)2
ID=50A, VGS=4V
4.7
6.6
m
Marking : K4066
Continued on next page.
Ordering number : ENA0225A
71206 / 41006 MS IM TB-00002121 / 12506QA MS IM TB-00002052
2SK4066
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4066_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4066-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / NCH 4V DRIVE SERIES |
| 2SK4066-DL-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NCH 4V DRIVE SERIES 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
| 2SK4066-DL-1EX | 功能描述:MOSFET N-CH 60V TO263-2 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:100A（Ta） 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷?（Qg）（最大值）:220nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:12500pF @ 20V FET 功能:- 功率耗散（最大值）:1.65W（Ta），90W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.7 毫歐 @ 50A，10V 工作溫度:150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:TO-263-2 封裝/外殼:TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 標(biāo)準(zhǔn)包裝:800 |
| 2SK4066-DL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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