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參數資料
| 型號： | 2SK4067 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | 2SK4067 |
2SK4067
No. A0565-1/4
Features
Motor drive applications.
4.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
8A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
32
A
Allowable Power Dissipation
PD
1W
Tc=25°C10
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=4A
2.6
4.4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=8A, VGS=10V
85
115
m
RDS(on)2
ID=4A, VGS=4.5V
155
220
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
260
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
65
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
40
pF
Marking : K4067
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0565
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
D2006PA TI IM TB-00002394
SANYO Semiconductors
DATA SHEET
2SK4067
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK4067-TL | 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4069-ZK-E2-AY | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4070(1)-S27-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4067-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 8A TO251 |
| 2SK4069-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4069-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4070 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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