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參數資料
| 型號： | 2SK4071-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SC-43A, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 168K |
| 代理商： | 2SK4071-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK4071
SWITCHING
N-CHANNEL MOSFET
DATA SHEET
Document No. D18388EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
DESCRIPTION
The 2SK4071 is the best switching element for the DC-DC
converter usage to 24 V in the direct current input voltage.
It excels in the switching characteristics in low on-state
resistance, and is the best for the high-speed switching usage.
FEATURES
Low input capacitance Ciss = 150 pF TYP.
Low on-state resistance
RDS(on)1 = 1.5
Ω MAX. (VGS = 4.5 V, ID = 0.5 A)
2.5 V drive available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4071-AZ
Note
TO-92 (SC-43A)
2SK4071-T-AZ
Note
TO-92 (SC-43A)
Note Pb-free (This product does not contain Pb in external
electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
150
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse)
Note
ID(pulse)
±4.0
A
Total Power Dissipation (TA = 25°C)
PT
0.75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
μs, Duty Cycle ≤ 1%
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1. Source
2. Drain
3. Gate
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關PDF資料 |
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|---|---|
| 2SK4077-ZK-E1-AY | 20000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4084LS | 14 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4096LS | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4098FG | POWER, FET, TO-220AB |
| 2SK4098FG | POWER, FET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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