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參數(shù)資料
| 型號： | 2SK4078-ZK-E1-AY |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關N溝道功率場效應晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 182K |
| 代理商： | 2SK4078-ZK-E1-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18885EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4078-ZK-E1-AY
Note
2SK4078-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Low on-state resistance
R
DS(on)1
= 8.5 m
Ω
MAX. (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 14.0 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 13 A)
Low input capacitance
C
iss
= 2300 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
40
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
±
50
±
150
V
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
P
T1
45
W
P
T2
1.0
W
Channel Temperature
T
ch
150
°
C
°
C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
150
I
AS
23
A
E
AS
52
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
=
25
°
C, V
DD
= 20 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
μ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
2.77
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
125
(TO-252)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK4078-ZK-E2-AY | SWITCHING N-CHANNEL POWER MOS FET |
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| 2SK400 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-247VAR |
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| 2SK402 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-247VAR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4078-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK408 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET |
| 2SK4080-ZK-E1-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4080-ZK-E2-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4081 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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