- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371558 > 2SK4115 (Toshiba Corporation) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS PDF資料下載
參數(shù)資料
| 型號： | 2SK4115 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 157K |
| 代理商： | 2SK4115 |
2SK4115
2007-07-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π
- MOS
Ⅳ
)
2SK4115
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 1.6
Ω
(typ.)
High forward transfer admittance:
Y
fs
= 5.0 S (typ.)
Low leakage current: I
DSS
= 100
μ
A (max) (V
DS
= 720 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DSS
900
V
Drain-gate voltage (R
GS
=
20 k
Ω
)
V
DGR
900
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
7
Drain current
Pulse
(Note 1)
I
DP
21
A
Drain power dissipation (Tc
=
25°C)
P
D
150
W
Single pulse avalanche energy
(Note 2)
E
AS
491
mJ
Avalanche current
I
AR
7
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
18.4 mH, R
G
=
25
Ω
, I
AR
=
7 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
2
±
0
2
±
0
4
3
9
2
1
4
2
2
Ф
3.2
±
0.2
15.9max.
5.45
±
0.2
5.45
±
0.2
2.0
±
0.3
1.0
1 2 3
＋
0.3
－
0.25
0
＋
0
－
0
1
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2
16C1B
Weight: 4.6 g (typ.)
1
3
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK417 | 2SK417 |
| 2SK447 | 2SK447 |
| 2SK447 | TECHNICAL DATA |
| 2SK525 | SILICON P-CHANNEL MOS FET |
| 2SK526 | MOTOR AND SOLENOID DRIVE APPLICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4115(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 7A 150W TO-3P(N) |
| 2SK4115(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4116LS | 功能描述:MOSFET N-CH 400V 12A TO-220FI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4116LS_0710 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4117LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。