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參數資料
| 型號： | 2SK416L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 中文描述： | 高SPPED電源開關互補性2SJ120L，2SJ120S對 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 47K |
| 代理商： | 2SK416L |
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK416S | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK427T | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK427U | TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK |
| 2SK428 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK420 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK416S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK417 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK417 |
| 2SK4171 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4177 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4177_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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