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參數資料
| 型號： | 2SK4207 |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 900 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 234K |
| 代理商： | 2SK4207 |
2SK4207
2008-04-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching Regulator Applications
Low drainsource ON-resistance: RDS (ON) = 0.78Ω (typ.)
High forward transfer admittance:|Yfs| = 11S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
13
A
Drain current
Pulse (Note 1)
IDP
39
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
491
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 , IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
20.
0
±0.
3
20.
5
±0.
5
4.
8m
ax
.
3.3
m
ax
.
9.
0
2.
0
1.
0
4.
5
2.
0
2.
8
Ф
3.2
±0.2
15.9max.
5.45
±0.2
5.45
±0.2
2.0
±0.3
1.0
1
2
3
＋
0.3
－
0.25
0.6
＋
0.
3
－
0.
1
1.
8m
ax
.
1: GATE
2: DRAIN (HEATSINK)
3: SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
3
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4207(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK421 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-220VAR |
| 2SK4210 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4212A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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