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參數資料
| 型號： | 2SK4209 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 286K |
| 代理商： | 2SK4209 |
2SK4209
No. A1516-1/5
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
800
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
12
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
24
A
Allowable Power Dissipation
PD
2.5
W
Tc=25°C
190
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
410
mJ
Avalanche Current *2
IAV
12
A
Note :
*1 VDD=99V, L=5mH, IAV=12A
*2 L≤5mH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
800
V
Zero-Gate Voltage Drain Current
IDSS
VDS=640V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
4.0
V
Marking : K4209
Continued on next page.
Ordering number : ENA1516
O2809QB TK IM TC-00002109
SANYO Semiconductors
DATA SHEET
2SK4209
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
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相關代理商/技術參數 |
參數描述 |
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| 2SK421 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-220VAR |
| 2SK4210 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4212A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4212A-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK4212A-ZK-E1-AY NCH ENHANCEMENT-TYP |
| 2SK4212A-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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