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參數資料
| 型號： | 2SK660-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SST, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 72K |
| 代理商： | 2SK660-A |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
| yfs | = 1200
S TYP. (VDS = 5 V, ID = 0 A)
Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK660
SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
–55 to +125
°C
Note VGS = –1.0 V
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
EQUIVALENT CIRCUIT
Source
Gate
Drain
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相關代理商/技術參數 |
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| 2SK662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK662-R |
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