- 您現在的位置：買賣IC網 > PDF目錄33476 > 2SK663Q (PANASONIC CORP) 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF資料下載
參數資料
| 型號： | 2SK663Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 206K |
| 代理商： | 2SK663Q |
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00010CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK0663 (2SK663)
Silicon N-channel junction FET
For low-frequency amplification
For switching circuits
■ Features
Low noise figure NF
High gate-drain voltage (source open) V
GDO
SMini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Drain-sourse voltage
VDS
55
V
Gate-drain voltage (Source open)
VGDO
55
V
Gate-source voltage (Drain open)
VGSO
55
V
Drain current
ID
30
mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG
= 100 A, V
DS
= 055
80
V
Drain-source current *
IDSS
VDS = 10 V, VGS = 0
1.0
12.0
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 0
10
nA
Gate-source cutoff voltage
VGSC
VDS
= 10 V, I
D
= 10 A
5V
Forward transfer admittance
Y
fs
VDS = 10 V, ID = 5 mA, f = 1 kHz
2.5
7.5
mS
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6.5
pF
(Common source)
Reverse transfer capacitance
Crss
1.9
pF
(Common source)
Noise figure
NF
VDS = 10 V, VGS = 0, f = 100 Hz
2.5
dB
Rg
= 100 k
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
1.0 to 3.0
2.0 to 6.5
5.0 to 12.0
Note) The part number in the parenthesis shows conventional part number.
■ Package
Code
SMini3-G1
Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 2B
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK1008-01 | 4.5 A, 500 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1011-01 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1015-01 | 18 A, 450 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1028 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK1034 | 15 A, 100 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F(A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK664 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SK665 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK666 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 4V V(BR)DSS | 150MA I(D) | MICRO-X |
| 2SK669 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 50V 0.1A SPA |
| 2SK669-AC | 功能描述:MOSFET N-CH 50V 100MA 3SPA RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復。