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參數資料
| 型號： | 2SK882 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-2E1C, SC-70, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 174K |
| 代理商： | 2SK882 |
2SK882
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
FM Tuner, VHF RF Amplifier Applications
Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: Gps = 28dB (typ.)
Recommend operation voltage: 5~15 V
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±5 V
±50
nA
Drain-source voltage
VDSX
VGS = -4 V, ID = 100 mA
20
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
3
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 100 mA
-2.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
10
mS
Input capacitance
Ciss
3.0
4.3
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
0.025
0.04
pF
Power gain
Gps
20
28
dB
Noise figure
NF
VDS = 10 V, f = 100 MHz (Figure 1)
1.7
3.0
dB
Note: IDSS classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK882_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
| 2SK882GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SC-70 |
| 2SK882Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SC-70 |
| 2SK888 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK888 |
| 2SK890 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK890 |
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