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參數資料
| 型號： | 2STF1550 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 140K |
| 代理商： | 2STF1550 |
Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
November 2008
Rev 2
1/8
8
2STF1550
2STN1550
Low voltage high performance NPN power transistors
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Surface mounting devices in medium power
SOT-89 and SOT-223 packages
Applications
■ Emergency lighting
■ LED
■ Motherboard and hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation
Description
The 2STF1550 and 2STN1550 are NPN
transistors manufactured using new “PB-HCD”
(Power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
saturation voltage.
Figure 1.
Internal schematic diagram
SOT-89
1
2
4
3
SOT-223
4
3
2
1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
2STF1550
1550
SOT-89
Tape and reel
2STN1550
N1550
SOT-223
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2STF1550_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Low voltage high performance NPN power transistors |
| 2STF2220 | 功能描述:兩極晶體管 - BJT Hi gain Lo Vltg PNP Pwr transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2STF2220_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High gain Low Voltage PNP power transistor |
| 2STF2280 | 功能描述:兩極晶體管 - BJT PNP LV High Perf PWR Trans - 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2STF2340 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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