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參數資料
| 型號： | 33LV408RPFB-30 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | SRAM |
| 英文描述： | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 30 ns, PDFP32 |
| 封裝： | LDFP-32 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 224K |
| 代理商： | 33LV408RPFB-30 |
1
M
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301 - wwwmaxwell.com
4 Megabit (512K x 8-Bit)
CMOS SRAM
33LV408
2004 Maxwell Technologies
All rights reserved.
04.02.04 REV 2
F
EATURES
:
R
AD
-P
AK
Technology radiation-hardened against natural
space radiation
524,288 x 8 bit organization
· Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single Event Effect
· - SEL
TH
: > 101 MeV/mg/cm
2
· - SEU
TH
: = 3 MeV/mg/cm
2
- SEU saturated cross section: 6E-9 cm
2
/bit
Package:
- 32-Pin R
AD
-P
AK
flat pack
Fast access time:
- 20, 25, 30 ns maximumtimes available
Single 3.3V + 10% power supply
Fully static operation
- No clock or refresh required
Three state outputs
TTL compatible inputs and outputs
Low power:
- Standby: 60 mA (TTL); 10 mA (CMOS)
- Operation: 150 mA (20 ns); 140 mA (25 ns);
130 mA (30 ns)
D
ESCRIPTION
:
Maxwell Technologies’ 33LV408 high-density 4 Megabit
SRAMmcrocircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mssion. Using Max-
well’s radiation-hardened R
AD
-P
AK
packaging technology, the
33LV408 realizes a high density, high performance, and low
power consumption. Its fully static design elimnates the need
for external clocks, while the CMOS circuitry reduces power
consumption and provides higher reliability. The 33LV408 is
equipped with eight common input/output lines, chip select
and output enable, allowing for greater systemflexibility and
elimnating bus contention. The 33LV408 features the same
advanced 512K x 8-bit SRAM high-speed, and low-power
demand as the commercial counterpart.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mssion. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
Logic Diagram
33LV408
相關PDF資料 |
PDF描述 |
|---|---|
| 33LV408 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 340-03A-3600 | Multi-level Series |
| 3401 | 4700 |
| 3402B | 200 V - 1,000 V Three Phase Bridge |
| 34063AM | 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 33LV408RPFE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33LV408RPFE-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33LV408RPFE-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33LV408RPFI-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33LV408RPFI-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
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