欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 3KASMC20-HE3/9AT
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數: 3/5頁
文件大小: 77K
代理商: 3KASMC20-HE3/9AT
New Product
3KASMC10 thru 3KASMC43A
Vishay General Semiconductor
Document Number: 88480
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
Note
(1)
Mounted on minimum recommended pad layout
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C unless otherwise noted)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient air
(1)
SYMBOL
R
JA
VALUE
UNIT
77.5
°C/W
Thermal resistance, junction to leads
R
JL
18.3
ORDERING INFORMATION
(Example)
PREFERRED P/N
3KASMC10AHE3/57T
(1)
3KASMC10AHE3/9AT
(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.211
57T
850
7" diameter plastic tape and reel
0.211
9AT
3500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.1
1
10
100
1000
10000
P
P
w
e
W
)
t
d
- P
u
lse
W
idth (
μ
s)
0
25
50
75
100
0
50
T
J
- Initial Temperat
u
re (°C)
100
150
200
P
u
l
w
e
P
)
u
r
P
)
D
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r
= 10
μ
s
Peak
V
al
u
e
I
PPM
Half
V
al
u
e -
I
PPM
I
PP
2
t
d
10/1000
μ
s
W
a
v
eform
as defined
b
y R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I
P
u
l
u
r
R
T
J
= 25 °C
P
u
lse
W
idth (t
)
is defined as the Point
w
here the Peak C
u
rrent
decays to 50 % of I
PPM
100
1000
10 000
10
20
30
40
50
C
J
u
n
V
W
M
- Re
v
erse Stand-off
V
oltage (
V
)
T
= 25 °C
f = 1.0 MHz
V
sig
= 50 m
V
p-p
Meas
u
red at
Zero Bias
Meas
u
red at
Stand-Off
V
oltage
相關PDF資料
PDF描述
3KASMC20AHE3/57T 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
3KASMC22A-HE3/57T 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
3KASMC22A-HE3/9AT 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
3KASMC24AHE3/9AT 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
3KASMC26A-HE3/9AT 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相關代理商/技術參數
參數描述
3KASMC22 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors
3KASMC22A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors
3KASMC22A-E3/57T 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 22V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
3KASMC22A-E3/9AT 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 22V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
3KASMC22AHE3/57T 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 22V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
主站蜘蛛池模板: 年辖:市辖区| 旬阳县| 成都市| 建水县| 神农架林区| 广西| 宁蒗| 阿图什市| 固阳县| 青河县| 阳信县| 尤溪县| 新巴尔虎右旗| 安泽县| 比如县| 十堰市| 山西省| 和田县| 卫辉市| 启东市| 龙里县| 泉州市| 公安县| 泾源县| 栾川县| 霍城县| 淮北市| 县级市| 宣汉县| 香港 | 大化| 府谷县| 巨鹿县| 邓州市| 巫山县| 宁德市| 海宁市| 会昌县| 梅河口市| 齐河县| 金湖县|