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參數資料
| 型號： | 3KASMC33AE3/9AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 88K |
| 代理商： | 3KASMC33AE3/9AT |
Vishay General Semiconductor
3KASMC10 thru 3KASMC43A
New Product
Document Number 88480
29-Jun-06
www.vishay.com
1
Surface Mount Automotive Transient Voltage Suppressors
High Temperature Stability & High Reliability Conditions
FEATURES
Patented PAR
construction
Available in Unidirectional polarity only
3000 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Typical I
D
less than 1.0 μA above 13 V rating
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
HE3 suffix for high reliability grade (AEC Q101
qualified)
Polarity:
Color band denotes cathode end
*
Patent #'s
4,980,315
5,166,769
5,278,094
Patented*
DO-214AB (SMC)
MAJOR RATINGS AND CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
j
max.
10 V to 43 V
3000 W
6.0 W
200 A
185 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(Fig. 3)
Peak power pulse current with a 10/1000 μs waveform
(1)
(Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
SYMBOL
VALUE
UNIT
P
PPM
I
PPM
I
FSM
P
D
V
F
T
J
, T
STG
Minimum 3000
W
see next table
A
200
A
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 6)
Maximum instantaneous forward voltage at 100 A
(2)
6.0
W
3.5
V
Operating junction and storage temperature range
- 65 to + 185
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 3KASMC36AE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC36E3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43E3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43-HE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC10A-HE3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 3KASMC33AHE3/57T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC33AHE3/9AT | 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC33AHE3\9AT | 制造商:Vishay Semiconductors 功能描述:DIODE, TVS, UNIDIR, 6W, 33V, DO-214AB, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:33V, Breakdown Voltage Min:36.7V, Breakdown Voltage Max:40.6V, Clamping Voltage Vc Max:53.3V, Peak Pulse Current Ippm:56.3A , RoHS Compliant: Yes |
| 3KASMC33AHE3_A/H | 制造商:Vishay Semiconductors 功能描述: |
| 3KASMC33AHE3_A/I | 制造商:Vishay Semiconductors 功能描述: |
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