- 您現在的位置：買賣IC網 > PDF目錄357299 > 3KASMC36-HE3/57T (VISHAY SEMICONDUCTORS) 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB PDF資料下載
參數資料
| 型號： | 3KASMC36-HE3/57T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數： | 3/5頁 |
| 文件大小： | 77K |
| 代理商： | 3KASMC36-HE3/57T |
New Product
3KASMC10 thru 3KASMC43A
Vishay General Semiconductor
Document Number: 88480
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
Note
(1)
Mounted on minimum recommended pad layout
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C unless otherwise noted)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient air
(1)
SYMBOL
R
JA
VALUE
UNIT
77.5
°C/W
Thermal resistance, junction to leads
R
JL
18.3
ORDERING INFORMATION
(Example)
PREFERRED P/N
3KASMC10AHE3/57T
(1)
3KASMC10AHE3/9AT
(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.211
57T
850
7" diameter plastic tape and reel
0.211
9AT
3500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.1
1
10
100
1000
10000
P
P
w
e
W
)
t
d
- P
u
lse
W
idth (
μ
s)
0
25
50
75
100
0
50
T
J
- Initial Temperat
u
re (°C)
100
150
200
P
u
l
w
e
P
)
u
r
P
)
D
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r
= 10
μ
s
Peak
V
al
u
e
I
PPM
Half
V
al
u
e -
I
PPM
I
PP
2
t
d
10/1000
μ
s
W
a
v
eform
as defined
b
y R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I
P
u
l
u
r
R
T
J
= 25 °C
P
u
lse
W
idth (t
)
is defined as the Point
w
here the Peak C
u
rrent
decays to 50 % of I
PPM
100
1000
10 000
10
20
30
40
50
C
J
u
n
V
W
M
- Re
v
erse Stand-off
V
oltage (
V
)
T
= 25 °C
f = 1.0 MHz
V
sig
= 50 m
V
p-p
Meas
u
red at
Zero Bias
Meas
u
red at
Stand-Off
V
oltage
相關PDF資料 |
PDF描述 |
|---|---|
| 3KASMC43A-HE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43AHE3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43HE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KP20 | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 3KP90CA | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 3KASMC40 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors |
| 3KASMC40A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions) |
| 3KASMC40A-E3/57T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 40V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC40A-E3/9AT | 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 40V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC40AHE3/57T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 3000W 40V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發布緊急采購，3分鐘左右您將得到回復。