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參數資料
| 型號： | 3LP02N |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速轉換應用的P溝道硅MOSFET) |
| 中文描述： | 個P - MOSFET的超高通道硅高速開關應用（超高速轉換應用的P溝道硅MOSFET的） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | 3LP02N |
81000TS (KOTO) TA-2010 No.6553-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
3LP02N
Ultrahigh-Speed Switching Applications
Ordering number:ENN6553
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2178
[3LP02N]
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Source
2 : Drain
3 : Gate
SANYO : NP
C
C
Marking : XD
Continued on next page.
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