- 您現在的位置：買賣IC網 > PDF目錄358641 > 3N164 (Vishay Intertechnology,Inc.) P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導通電阻300Ω的P溝道增強型MOSFET晶體管) PDF資料下載
參數資料
| 型號： | 3N164 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導通電阻300Ω的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 30V時，最大導通電阻300Ω的P溝道增強型MOSFET的晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | 3N164 |
3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94
1
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number
V
(BR)DSS
Min
(V)
V
GS(th)
(V)
r
DS(on)
Max
( )
I
D(on)
Min
(mA)
C
rss
Max
(pF)
t
ON
Typ
(ns)
3N163
–40
–2 to –5
250
–5
0.7
18
3N164
–30
–2 to –5
300
–3
0.7
18
Features
Ultra-Low Input Leakage: 0.02 pA Typ.
High Gate Breakdown Voltage:
Normally Off
Benefits
High Input Impedance Isolation
Minimize Handling ESD Problems
High Off Isolation without Power
Applications
Ultra-High Input Impedance Amplifier
Smoke Detectors
Electrometers
Analog Switching
Digital Switching
125 V
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
Case
Substrate
Top View
D
G
TO-206AF
(TO-72)
1
2
3
4
S
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
–40
Continuous Drain Current
–50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 seconds)
300 C
. . . . . . . . .
Storage Temperature
Operating Junction Temperature
Power Dissipation
a
–65 to 200 C
–55 to 150 C
375 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Derate 3 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
相關PDF資料 |
PDF描述 |
|---|---|
| 3N170 | N-CHANNEL MOSFET ENHANCEMENT MODE |
| 3N170-71 | 30V N-Channel PowerTrench MOSFET |
| 3N170 | 30V N-Channel PowerTrench MOSFET |
| 3N170 | PTSE 8C 8#16 PIN RECP |
| 3N170-1 | N-CHANNEL MOSFET ENHANCEMENT MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 3N164_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an enhancement mode P-Channel Mosfet |
| 3N164-E3 | 功能描述:MOSFET 30V 3mA 375mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 3N165 | 制造商:Calogic LLC 功能描述: 制造商:SOLITRON 功能描述: |
| 3N165_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a monolithic dual enhancement mode P-Channel Mosfet |
| 3N165-6 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
發布緊急采購，3分鐘左右您將得到回復。