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參數資料
型號: 3SK165A-0
廠商: Sony Corporation
英文描述: GaAs N-channel Dual Gate MES FET
中文描述: 砷化鎵N溝道雙柵場效應晶體管
文件頁數: 1/5頁
文件大小: 59K
代理商: 3SK165A-0
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
Low voltage operation
Low noise: NF = 1.2dB (typ.) at 800MHz
High gain: Ga = 20dB (typ) at 800MHz
High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
G1S
V
G2S
I
D
P
D
Tch
Tstg
8
V
V
V
–6
–6
80
150
150
mA
mW
°C
°C
–55 to +150
– 1 –
3SK165A
E96Y12-PS
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
相關PDF資料
PDF描述
3SK165A-1 GaAs N-channel Dual Gate MES FET
3SK166 GaAs N-channel Dual Gate MES FET
3SK166A GaAs N-channel Dual Gate MES FET
3SK166A-0 GaAs N-channel Dual Gate MES FET
3SK166A-2 GaAs N-channel Dual Gate MES FET
相關代理商/技術參數
參數描述
3SK165A1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 8V V(BR)DSS | 80MA I(D) | SOT-143R
3SK165A-1 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET
3SK166 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET
3SK166A 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET
3SK166A-0 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET
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