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參數資料
型號: 41LV16100B-60T
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 100萬× 16(16兆)動態與江戶頁面模式內存
文件頁數: 21/22頁
文件大小: 152K
代理商: 41LV16100B-60T
IS41LV16100B
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
ISSI
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tWP
Write Command Pulse Width(17)
8—
10
ns
tWPZ
WE Pulse Widths to Disable Outputs
10
10
ns
tRWL
Write Command to
RAS Lead Time(17)
13
15
ns
tCWL
Write Command to
CAS Lead Time(17, 21)
8—
15
ns
tWCS
Write Command Setup Time(14, 17, 20)
0—
ns
tDHR
Data-in Hold Time (referenced to
RAS)39
40
ns
tOEH
OE Hold Time from WE during
14
15
ns
READ-MODIFY-WRITE cycle(18)
tDS
Data-In Setup Time(15, 22)
0—
ns
tDH
Data-In Hold Time(15,22)
8—
15
ns
tRWC
READ-MODIFY-WRITE Cycle Time
110
155
ns
tRWD
RAS to WE Delay Time during
65
85
ns
READ-MODIFY-WRITE Cycle(14)
tCWD
CAS to WE Delay Time(14, 20)
26
40
ns
tAWD
Column-Address to
WE Delay Time(14)
40
55
ns
tPC
EDO Page Mode READ or WRITE
30
40
ns
Cycle Time(24)
tRASP
RAS Pulse Width in EDO Page Mode
50
100K
60
100K
ns
tCPA
Access Time from
CAS Precharge(15)
—30
35
ns
tPRWC
EDO Page Mode READ-WRITE
56
56
ns
Cycle Time(24)
tCOH
Data Output Hold after
CAS LOW
5—
ns
tOFF
Output Buffer Turn-Off Delay from
3
12
3
15
ns
CAS or RAS(13,15,19,29)
tWHZ
Output Disable Delay from
WE
310
3
15
ns
tCLCH
Last
CAS going LOW to First CAS
10
10
ns
returning HIGH(23)
tCSR
CAS Setup Time (CBR REFRESH)(30, 20)
5—
ns
tCHR
CAS Hold Time (CBR REFRESH)(30,21)
8—
10
ns
tORD
OE Setup Time prior to RAS during
0
0
ns
HIDDEN REFRESH Cycle
tREF
Auto Refresh Period (1,024 Cycles)
16
16
ms
tT
Transition Time (Rise or Fall)(2, 3)
350
3
50
ns
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PDF描述
41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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參數描述
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41LV16100B-60TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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