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參數資料
| 型號： | 41LV16100B-60TLI |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 16/22頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 41LV16100B-60TLI |
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. B
04/13/05
ISSI
TRUTH TABLE
Function
RAS
LCAS
LCAS UCAS
UCAS
WE
OE
Address tR/tC
I/O
Standby
H
X
High-Z
Read: Word
L
H
L
ROW/COL
DOUT
Read: Lower Byte
L
H
L
ROW/COL
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
X
ROW/COL
DIN
Write: Lower Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
Read-Write(1,2)
LL
L
H
→LL→H
ROW/COL
DOUT, DIN
EDO Page-Mode Read(2) 1st Cycle:
L
H
→LH→L
H
L
ROW/COL
DOUT
2nd Cycle:
L
H
→LH→L
H
L
NA/COL
DOUT
Any Cycle:
L
→HL→H
H
L
NA/NA
DOUT
EDO Page-Mode Write(1) 1st Cycle:
L
H
→LH→L
L
X
ROW/COL
DIN
2nd Cycle:
L
H
→LH→L
L
X
NA/COL
DIN
EDO Page-Mode(1,2)
1st Cycle:
L
H
→LH→LH→LL→H
ROW/COL
DOUT, DIN
Read-Write
2nd Cycle:
L
H
→LH→LH→LL→H
NA/COL
DOUT, DIN
Hidden Refresh
Read(2)
L
→H→L
L
H
L
ROW/COL
DOUT
Write(1,3)
L
→H→L
L
X
ROW/COL
DOUT
RAS-Only Refresh
L
H
X
ROW/NA
High-Z
CBR Refresh(4)
H
→L
L
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two
CAS signals must be active (LCAS or UCAS).
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