
Absolute Maximum Ratings (Notes 2, 3)
If Military/Aerospace specified devices are required,
please contact the CSMSC Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
6.0V
Storage Temperature
65C to +150C
Input Voltage
0.3V to V
DD +0.3V
Power Dissipation (P
D) (Note 4)
Internally Limited
ESD Susceptibility (Note 5)
3.5kV
ESD Susceptibility (Note 6)
250V
Junction Temperature (T
J)
150C
Soldering Information (Note 1)
Small Outline Package
Vapor Phase (60 seconds)
215C
Infrared (15 seconds)
220C
Thermal Resistance
θ
JC (MSOP)
56C/W
θ
JA (MSOP)
210C/W
θ
JC (SOP)
35C/W
θ
JA (SOP)
170C/W
θ
JA (LLP)
117C/W (Note 10)
θ
JA (LLP)
150C/W (Note 11)
Operating Ratings (Notes 2, 3)
Temperature Range
T
MIN ≤ TA ≤ TMAX
40C
≤ T
A ≤ 85C
Supply Voltage
2.0V
≤ V
CC ≤ 5.5V
Electrical Characteristics V
DD =5V (Notes 2, 3)
The following specifications apply for V
DD = 5V, RL =16 unless otherwise stated. Limits apply for TA = 25C.
Symbol
Parameter
Conditions
HWD2119
Units
(Limits)
Typical
Limit
(Note 7)
(Notes 8, 9)
I
DD
Quiescent Power Supply Current
V
IN = 0V, Io = 0A
1.5
3.0
mA (max)
I
SD
Shutdown Current
V
PIN1 =VDD (Note 12)
1.0
5.0
A (max)
V
SDIH
Shutdown Voltage Input High
4.0
V (min)
V
SDIL
Shutdown Voltage Input Low
1.0
V (max)
V
OS
Output Offset Voltage
V
IN = 0V
5
50
mV (max)
P
O
Output Power
THD = 10%, f
IN = 1kHz
350
mW
THD = 10%, f
IN = 1kHz, RL =8
300
mW
THD+N
Total Harmonic Distortion + Noise
P
O = 270mWRMS,AVD =2,fIN =
1kHz
1%
Electrical Characteristics V
DD =3V (Notes 2, 3)
The following specifications apply for V
DD = 3V and RL =16 load unless otherwise stated. Limits apply to TA = 25C.
Symbol
Parameter
Conditions
HWD2119
Units
(Limits)
Typical
Limit
(Note 7)
(Notes 8, 9)
I
DD
Quiescent Power Supply Current
V
IN = 0V, Io = 0A
1.0
3.0
mA (max)
I
SD
Shutdown Current
V
PIN1 =VDD (Note 12)
0.7
5.0
A (max)
V
SDIH
Shutdown Voltage Input High
2.4
V (min)
V
SDIL
Shutdown Voltage Input Low
0.6
V (max)
V
OS
Output Offset Voltage
V
IN = 0V
5
50
mV
P
O
Output Power
THD = 10%, f
IN = 1kHz
110
mW
THD = 10%, f
IN = 1kHz, RL =8
90
mW
THD+N
Total Harmonic Distortion + Noise
P
O = 80mWRMS,AVD =2,fIN =
1kHz
1%
2