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參數資料
型號: 48SD1616RPFK
廠商: MAXWELL TECHNOLOGIES
元件分類: DRAM
英文描述: 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks
中文描述: 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72
封裝: DFP-72
文件頁數: 8/42頁
文件大小: 596K
代理商: 48SD1616RPFK
48SD1616
M
em
o
ry
16
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM
01.07.05 REV 4
To [ACTV]: This command makes the other bank active. ( However, an interval of t
RRD is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]: These commands set the SDRAM to precharge mode. (However, an interval of t
RAS is
required.)
From READ state, command operation
To [DESL], [NOP]: These commands continue read operations until the operation is completed.
To [READ], [READ A]: Data output by the previous read command continues to be output. After CAS
latency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]: These commands stop a burst read, and start a write cycle.
To [ACTV]: This command makes other banks bank active. (However, an interval of t
RRD is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]: These commands stop a burst read, and the SDRAM enters precharge mode.
From READ with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and
the SDRAM then enters precharge mode.
To [ACTV]: This command makes other banks active. (However, an interval of t
RRD is required.) Attempting
to make the currently active bank active results in an illegal command.
From WRITE state, command operation
To [DESL], [NOP]: These commands continue write operations until the burst operation is completed.
To [READ], [READ A]: These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]: These commands stop a burst and start the next write cycle.
To [ACTV]: This command makes the other bank active. (However, an interval of t
RRD is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]: These commands stop burst write and the SDRAM then enters precharge mode.
From WRITE with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]: These commands continue write operations until the burst is completed, and the
synchronous DRAM enters precharge mode.
To [ACTV]: This command makes the other bank active. (However, an interval of t
RRD is required.)
Attempting to make the currently active bank active result in an illegal command.
From REFRESH state, command operation
To [DESL], [NOP]: After an auto-refresh cycle (after t
RC) the SDRAM automatically enters the IDLE state.
相關PDF資料
PDF描述
48SD1616 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks
48SD3208RPFK CAP 1.5UF 50V CERAMIC MONO 20%
48SD3208RPFE 256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFH 256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFI CAP 1.5UF 50V CERAMIC MONO 20%
相關代理商/技術參數
參數描述
48SD3208 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFE 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFH 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFI 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
48SD3208RPFK 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
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