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參數資料
| 型號： | 4N25AV |
| 廠商： | QUALITY TECHNOLOGIES CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 246K |
| 代理商： | 4N25AV |
1
Motorola Optoelectronics Device Data
6-Pin DIP Optoisolators
Transistor Output
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
3
Volts
Forward Current — Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25
°C
PD
120
1.41
mW
mW/
°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
30
Volts
Emitter–Collector Voltage
VECO
7
Volts
Collector–Base Voltage
VCBO
70
Volts
Collector Current — Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25
°C
PD
150
1.76
mW
mW/
°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
250
2.94
mW
mW/
°C
Ambient Operating Temperature Range(2)
TA
– 55 to +100
°C
Storage Temperature Range(2)
Tstg
– 55 to +150
°C
Soldering Temperature (10 sec, 1/16
″ from case)
TL
260
°C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by 4N25/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
4N25
4N25A
4N26
4N27
4N28
*Motorola Preferred Devices
*
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
[CTR = 20% Min]
*
[CTR = 10% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
6
1
4N25
4N25A
4N26
4N27
4N28
Motorola, Inc. 1995
REV 5
QT Optoelectronics
相關PDF資料 |
PDF描述 |
|---|---|
| 4N25S | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N26VS | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N27VS | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28S | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28VS | TRANSISTOR OUTPUT OPTOCOUPLER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 4N25FM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25FR2M | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25FR2VM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25FVM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25GV | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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