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參數資料
| 型號： | 4N26X001 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 298K |
| 代理商： | 4N26X001 |
2000 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG Regensburg, Germany
www.osram-os.com +49-941-202-7178
1
March 27, 2000-00
DESCRIPTION
This data sheet presents ve families of Inneon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Inneon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specication is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS) on the phototransistor substrate. These isolation pro-
cesses and the Inneon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed conguration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in Inches (mm)
DEVICE TYPES
Part No.
CTR % Min.
Part No.
CTR % Min.
4N25
20
MCT2
20
4N26
20
MCT2E
20
4N27
10
MCT270
50
4N28
10
MCT271
45–90
4N35
100
MCT272
75–150
4N36
100
MCT273
125–250
4N37
100
MCT274
225–400
4N38
10
MCT275
70–90
H11A1
50
MCT276
15–60
H11A2
20
MCT277
100
H11A3
20
H11A4
10
H11A5
30
FEATURES
Interfaces with Common Logic Families
Input-output Coupling Capacitance < 0.5 pF
Industry Standard Dual-in-line 6-pin Package
Field Effect Stable by TRIOS
5300 VRMS Isolation Test Voltage
Underwriters Laboratory File #E52744
VDE #0884 Approval Available with Option 1
APPLICATIONS
AC Mains Detection
Reed Relay Driving
Switch Mode Power Supply Feedback
Telephone Ring Detection
Logic Ground Isolation
Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
V
DE
PHOTOTRANSISTOR
Industry Sta ndard
Single Channel
6 Pin DIP Optocoupler
相關PDF資料 |
PDF描述 |
|---|---|
| 4N38X001 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N27X001 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28X001 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N25 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 4N26-X001 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N26-X006 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N26-X007 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, With Base Connection |
| 4N26-X009 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out CTR>20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N26-X009T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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