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參數資料
| 型號： | 4N27-X009 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMD, 6 PIN |
| 文件頁數： | 2/9頁 |
| 文件大小： | 118K |
| 代理商： | 4N27-X009 |
Document Number: 81864
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.0, 11-Mar-08
2
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
t
≤ 10 s
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7V
Collector current
IC
50
mA
t
≤ 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
IF = 50 mA
VF
1.3
1.5
V
Reverse current (2)
VR = 3.0 V
IR
0.1
100
A
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector base breakdown voltage (2)
IC = 100 A
BVCBO
70
V
Collector emitter breakdown voltage(2)
IC = 1.0 mA
BVCEO
30
V
Emitter collector breakdown voltage (2)
IE = 100 A
BVECO
7V
ICEO(dark) (2)
VCE = 10 V, (base open)
4N25
5
50
nA
4N26
5
50
nA
4N27
5
50
nA
4N28
10
100
nA
ICBO(dark) (2)
VCB = 10 V,
(emitter open)
2.0
20
nA
Collector emitter capacitance
VCE = 0
CCE
6.0
pF
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