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參數資料
| 型號： | 4N35DCJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS |
| 中文描述： | 兼容標準的TTL集成電路 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 135K |
| 代理商： | 4N35DCJ |
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at 25
°C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC = 100 A, IE = 0,
IF = 0
70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC = 10 mA,
IB = 0,
IF = 0
30
V
V(BR)EBO
Emitter-base breakdown voltage
IE = 100 A,
IC = 0,
IF = 0
7
V
IR
Input diode static reverse current
VR = 6 V
10
A
IIO
Input-to-output current
VIO = rated peak value,
t = 8 ms
100
mA
VCE = 10 V,
IF = 10 mA,
IB = 0
10
IC(on)
On-state collector current
VCE = 10 V,
TA = – 55°C
IF = 10 mA,
IB = 0,
4
mA
()
VCE = 10 V,
TA = 100°C
IF = 10 mA,
IB = 0,
4
VCE = 10 V,
IF = 0
IB = 0
1
50
nA
IC(off)
Off-state collector current
VCE = 30 V,
TA = 100°C
IF = 0,
IB = 0,
500
A
hFE
Transistor static forward current transfer ratio
VCE = 5 V,
IC = 10 mA,
IF = 0
500
IF = 10 mA
0.8
1.5
VF
Input diode static forward voltage
IF = 10 mA,
TA = – 55°C
0.9
1.7
V
IF = 10 mA,
TA = 100°C
0.7
1.4
VCE(sat)
Collector-emitter saturation voltage
IC = 0.5 mA, IF = 10 mA,
IB = 0 mA
0.3
V
rIO
Input-to-output internal resistance
VIO = 500 V, See Note 6
1011
Cio
Input-to-output capacitance
VIO = 0,
f = 1 MHz,
See Note 6
1
2.5
pF
JEDEC registered data
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
switching characteristics at 25
°C free-air temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Time-on time
VCC = 10 V,
IC(on) = 2 mA,
7
10
s
toff
Turn-off time
CC
RL = 100 ,
C(on)
See Figure 1
7
10
s
JEDEC registered data
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