- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30704 > 4N35GVSERIES (Vishay Intertechnology,Inc.) Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits PDF資料下載
參數(shù)資料
| 型號： | 4N35GVSERIES |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 與光電晶體管光電耦合器輸出 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 147K |
| 代理商： | 4N35GVSERIES |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
89
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
Isi
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
Tamb ≤ 25°C
Psi
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
VIOTM
6
kV
Safety temperature
Tsi
150
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage –
Routine test
100%, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage – tTr = 60 s, ttest = 10 s,
VIOTM
6
kV
gg
Lot test (sample test)
Tr
test
(see figure 2)
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
W
VIO = 500 V,
Tamb = 100°C
RIO
1011
W
VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO
109
W
0
25
50
75
125
0
50
100
150
200
300
P
–
T
otal
Power
Dissipation
(
mW
)
tot
Tsi – Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N35MTA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35MTB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35S1TA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35S1TB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35STB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N35M | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER PHOTOTRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLERPHOTOTRANSISTOR 7.5KV 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, PHOTOTRANSISTOR, 7.5KV; No. of Channels:1; Isolation Voltage:7.5kV; Optocoupler Output Type:Phototransistor; Input Current:10mA; Output Voltage:30V; Opto Case Style:DIP; No. of Pins:6 |
| 4N35-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35M_F132 | 功能描述:晶體管輸出光電耦合器 Phototransistor Output RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35MTA-V | 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。