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參數資料
| 型號： | 4N36 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 電容 |
| 英文描述： | Tantalum Chip Capacitor |
| 中文描述： | 鉭芯片電容器 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 157K |
| 代理商： | 4N36 |
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1) Indicates JEDEC registered value
Output
1) Indicates JEDEC registered value
Coupler
1) Indicates JEDEC registered value
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage1)
IF = 10 mA
VF
1.3
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current1)
VR = 6.0 V
IR
0.1
10
A
Capacitance
VR = 0, f = 1.0 MHz
CO
25
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage1)
IC = 1.0 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
4N38
BVCEO
80
V
Emitter-collector breakdown
voltage1)
IE = 100 ABVECO
7.0
V
Collector-base breakdown
voltage1)
IC = 100 A, IB = 1.0 A4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
4N38
BVCBO
80
V
Collector-emitter leakage
current1)
VCE = 10 V, IF = 0
4N35
ICEO
5.0
50
nA
4N36
ICEO
5.0
50
nA
VCE = 10 V, IF=0
4N37
ICEO
5.0
50
nA
VCE = 60 V, IF = 0
4N38
ICEO
50
nA
VCE = 30 V, IF = 0, Tamb =
100 °C
4N35
ICEO
500
A
4N36
ICEO
500
A
4N37
ICEO
500
A
VCE = 60 V, IF = 0, Tamb =
100 °C
4N38
ICEO
6.0
A
Collector-emitter capacitance
VCE = 0
CCE
6.0
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Resistance, input to output1)
VIO = 500 V
RIO
1011
Capacitance (input-output)
f = 1.0 MHz
CIO
0.5
pF
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