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參數資料
| 型號： | 4N38X001 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 298K |
| 代理商： | 4N38X001 |
2000 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
Phototransistor, Industry Standard
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG Regensburg, Germany
www.osram-os.com +49-941-202-7178
2
March 27, 2000-00
Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t
≤10 s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage ..............................................................................................
≥7.0 mm
Clearance .............................................................................................
≥7.0 mm
Isolation Thickness between Emitter and Detector ...............................
≥0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................10
12
VIO=500 V, TA=100°C............................................................................ 10
11
Storage Temperature................................................................ –55
°C to +150°C
Operating Temperature ............................................................ –55
°C to +100°C
Junction Temperature................................................................................ 100
°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
* Indicates JEDEC registered values
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
VF
—
1.3
1.5
V
IF=50 mA
Reverse Current*
IR
—
0.1
100
A
VR=3.0 V
Capacitance
CO
—
25
—
pF
VR=0
Detector
Breakdown Voltage*
Collector-Emitter
BVCEO
30
——
V
IC=1.0 mA
Emitter-Collector
BVECO
7.0
——
IE=100 A
Collector-Base
BVCBO
70
——
IC=100 A
ICEO(dark)*
4N25/26/27
4N28
——
5.0
10
50
100
nA
VCE=10 V, (base open)
ICBO(dark)*
——
2.0
20
nA
VCB=10 V, (emitter open)
Capacitance, Collector-Emitter
CCE
—
6.0
—
pF
VCE=0
Package
DC Current Transfer Ratio*
4N25/26
CTR
20
50
—
%
VCE=10 V, IF=10 mA
4N27/28
10
30
—
Isolation Voltage*
4N25
VIO
2500
——
V
Peak, 60 Hz
4N26/27
1500
——
4N28
500
——
Saturation Voltage, Collector-Emitter
VCE(sat)
——
0.5
V
ICE=2.0 mA, IF=50 mA
Resistance, Input to Output*
RIO
100
——
G
VIO=500 V
Coupling Capacitance
CIO
—
0.5
—
pF
f=1.0 MHz
Rise and Fall Times
tr, tf
—
2.0
—
s
IF=10 mA
VCE=10 V, RL=100
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