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參數資料
| 型號： | 4N39-X001 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL SCR OUTPUT OPTOCOUPLER |
| 封裝： | DIP-6 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 356K |
| 代理商： | 4N39-X001 |
Document Number: 83603
www.vishay.com
Revision 17-August-01
2–61
Characteristics TA=25°C
Parameters
Sym.
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
—
1.2
1.5
V
IF=20 mA
Reverse Current
IR
——
10
A
VR=5.0 V
Detector
Forward Blocking
Voltage
VDM
200
—
V
RGK=10 k
TA=100°C
Id=150 A
Reverse Blocking
Voltage
VRM
200
—
V
On-state Voltage
VTM
—
1.2
V
ITM=300 mA
Holding Current
IH
—
200
A
RGK=27 k
VFX=50 V
Gate Trigger
Voltage
VGT
—
0.6
1.0
V
VFX=100 V
RGK=27 k
RL=10 K
Forward Leakage
Current
IDM
——
50
A
RGK=10 k
VRX=200 V
IF=0,
TA=100°C
Reverse Leakage
Current
IRM
——
50
A
RGK=27 k
VRX=200 V
IF=0,
TA=100°C
Package
Turn-0n Current
IFT
—15
30
mA
VFX=50 V
RGK=10 k
—
8.0
14
—
VFX=100 V
RGK=27 k
Isolation
Capacitance
—
2.0
—
pF
f=1.0 MHz
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
1
2
3
6
5
4
Gate
Anode
Cathode
Anode
Cathode
NC
Dimensions in Inches (mm)
FEATURES
Turn On Current (IFT), 5.0 mA Typical
Gate Trigger Current (IGT), 20 mA
Surge Anode Current, 10 Amp
Blocking Voltage, 200 VACPK
Gate Trigger Voltage (VGT), 0.6 Volt
Isolation Voltage, 5300 VRMS
Solid State Reliability
Standard DIP Package
Underwriters Lab File #E52744
VDE Approval #0884 Available with
Option 1
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be
used in SCR triac and solid state relay applica-
tions where high blocking voltages and low input
current sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................... 6.0 V
Peak Forward Current
(100
s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
°C......................... 100 mW
Derate Linearly from 50
°C..................... 2.0 mW/°C
Detector
Reverse Gate Voltage..................................... 6.0 V
Anode Peak Blocking Voltage ...................... 200 V
Peak Reverse Gate Voltage............................ 6.0 V
Anode Current ............................................ 300 mA
Surge Anode Current (100
s duration).......... 10 A
Surge Gate Current (5.0 ms duration)........ 100 mA
Power Dissipation, 25
°C ambient.............. 400 mW
Derate Linearly from 25
°C..................... 8.0 mW/°C
Package
Isolation Test Voltage (1.0 sec.)............. 5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C................................≥10
12
VIO=500 V, TA=100°C..............................≥10
11
Total Package Dissipation ......................... 450 mW
Derate Linearly from 50
°C..................... 9.0 mW/°C
Operating Temperature ............... –55
°C to +100°C
Storage Temperature................... –55
°C to +150°C
Soldering Temperature (10 s.).......................260
°C
V
DE
4N39
Photo SCR Optocoupler
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