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參數(shù)資料
| 型號(hào)： | 4N600(3600) |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Field Effect Transistor |
| 中文描述： | N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | 4N600(3600) |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
N-Channel Field Effect Transistor
4N600(3600)
Ordering Information
Device
Package
Temp.
4N600T
TO-220
0 to 150
°C
4N600S
TO-263 ( D
2 )
0 to 150
°C
Absolute Maximum Rating
Symbol
Parameter
Max
Unit
Drain Current
-Continues
4.0
2.5
ID (TC=25°C)
ID (TC=100°C)
-Pulsed
16
A
VGSV
Gate Source Voltage
±20
V
Total Power Dissipation @ TC =25°C
75
W
PD
Derate above 25
°C
0.59
W/
°°°°C
TJ
Operating and Storage
TSTG
Temperature Range
-55 to 150
°°°°C
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2 surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low RDS(ON)
VDSS = 600V
RDS (ON) = 1.9
ID = 4.0A
Bay Linear
Inspire the Linear Power
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