- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30706 > 4N600S (Electronic Theatre Controls, Inc.) N-Channel Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | 4N600S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Field Effect Transistor |
| 中文描述： | N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 36K |
| 代理商： | 4N600S |
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
4N600(3600)
Electrical Characteristics ( T
C = 25
°°°°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IDSS
Zero Gate Voltage Drain Current
VDS=600V
VGS=0V
100
A
V
Drain-to-Source Breakdown
ID=100A, VGS=0
600
-
V
VGS(TH)
Gate Threshold Voltage
VDS=VGS
ID=250A
2
4
V
RDS(ON)
Static Drain Voltage
VGS=10V, ID=2.4A
-
1.9
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS=20V
VGS=-20V
100
-100
NA
gfs
Forward Tranconductance
VDS=100V, ID =2.4A
2.9
S
CISS
Input Capacitance
800
pF
COSS
Output Capacitance
110
pF
CRSS
Reverse Tras. Capacitance
VDS= 25V, VGS=0V
F=1.0 MHZ
20
pF
tD(ON)
Turn-ON Delay Time
12
tr
Turn-ON Rise Time
18
td(off)
Turn-OFF Delay Time
53
tF
Turn-OFF Fall Time
VDD=300V
ID=2.4A, RGEN=12
RD=74
19
NS
IS
Maxim Continuous Drain source Diode Forward Current
4.0
A
VDS (note)
Drain Source Diode
Forward Voltage
VGS=0V
IS=4A
1.50
V
THERMAI CHRACTERISTICS
RJC
Thermal Resistance, Junction to Case
5
°°°°C/W
RJC
Thermal Resistance, Junction to Ambient
100
°°°°C/W
Note: Pulse Test: Pulse With
≤ 300 S, Duty Cycle ≤ 2.0%
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N600T | N-Channel Field Effect Transistor |
| 4X150A | RADIAL BEAM POWER TETRODE |
| 4X150D | RADIAL BEAM POWER TETRODE |
| 6-1437133-7 | INTERCONNECTION DEVICE |
| 6-1437142-2 | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N600T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Field Effect Transistor |
| 4N60G-T2Q-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:4A, 600V N-CHANNEL POWER MOSFET |
| 4N60G-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:4A, 600V N-CHANNEL POWER MOSFET |
| 4N60G-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:4A, 600V N-CHANNEL POWER MOSFET |
| 4N60G-TF2-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:4A, 600V N-CHANNEL POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。