
Description
This PIN diode chip is silicon dioxide or nitride passi-
vated. The 5082-0012 has a planar construction. The
fabrication processes are optimized for long term
reliability and tightly controlled for uniformity in
electrical performance.
Outline
Maximum Ratings
Junction Operating and Storage
Temperature Range ............................. -65
°C to +150°C
Soldering Temperature .......... +425
°C for 1 min. max.
5082-0012
PIN Diode Chip for Hybrid MIC Switches/Attenuators
Data Sheet
Features
Low Series Resistance: 1.0
Typical
Applications
This general purpose PIN diode is intended for low
power switching applications such as duplexers,
antenna switching matrices, digital phase shifters, time
multiplex filters, TR switches, pulse and amplitude
modulators, limiters, leveling circuits, and attenuators.
Electrical Specifications at TA = 25
°C
Typical Parameters
Nearest
Typical
Chip
Equivalent
Minimum
Maximum
Typical
Reverse
Part
Packaged
Breakdown
Junction
Series
Typical
Recovery
Number
Part No.
Voltage
Capacitance
Resistance
Lifetime
Time
5082-
V
BR (V)
C
j (pF)
R
S (
)
τττττ (ns)
t
rr (ns)
0012
3001
150
0.12
1.0
400
100
Test
V
R = VBR
V
R = 50 V
I
F = 100 mA
I
F = 50 mA
I
F = 20 mA
Conditions
Measure
f = 1 MHz
f = 100 MHz
I
R = 250 mA
V
R = 10 V
I
R ≤ 10 mA
90% Recovery
D
X
Y
X
0.10
(4)
0.38
(15)
0.23
(9.0)
Au. Cathode
Au. Anode
D
±0.03 (1)
X
±0.05 (2)
Y
±0.03 (1)
Top Contact
Bottom Contact
Dimensions in millimeters
(1/1000 inch)
DIMENSIONS