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參數資料
| 型號： | 5082-2303 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | 5082-2303 |
Schottky Barrier Diodes for
General Purpose Applications
Technical Data
Features
Low Turn-On Voltage
As Low as 0.34 V at 1 mA
Pico Second Switching Speed
High Breakdown Voltage
Up to 70 V
Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 ................................................................. -60
°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 .................................... -65
°C to +200°C
5082-2835 ............................................................................ -60
°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. V
BR
相關PDF資料 |
PDF描述 |
|---|---|
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2303 | SILICON, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2811 | SILICON, MIXER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 5082-2350 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2351 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2356 | 制造商:Hewlett Packard Co 功能描述: |
| 5082-2750 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
| 5082-2755 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE |
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