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參數(shù)資料
| 型號： | 5082-2811 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 5082-2811 |
Schottky Barrier Diodes for
General Purpose Applications
Technical Data
Features
Low Turn-On Voltage
As Low as 0.34 V at 1 mA
Pico Second Switching Speed
High Breakdown Voltage
Up to 70 V
Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 ................................................................. -60
°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 .................................... -65
°C to +200°C
5082-2835 ............................................................................ -60
°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. V
BR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5082-2900 | SILICON, MIXER DIODE |
| 5082-2810 | SILICON, MIXER DIODE |
| 5082-2835TXV | SILICON, UHF BAND, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2800 | SILICON, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-2811#T25 | 功能描述:肖特基二極管與整流器 15 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 5082-2811#T50 | 功能描述:肖特基二極管與整流器 15 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 5082-2811 | 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY |
| 5082-2817 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
| 5082-2818 | 制造商:ASI 制造商全稱:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE |
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