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參數(shù)資料
型號(hào): 514A4
英文描述: Infrared Emitting Diodes (IRED)
中文描述: 紅外發(fā)光二極管(登記合格決定)
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 33K
代理商: 514A4
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-514A4 is an infrared emitting diodes in
GaAs technology with AlGaAs window coating
encapsulated in water clear package.
Features
l
High radiant power and high radiantintensity
l
Standard T-1 3/4 (
φ
5mm) package
l
Peak wavelength
λ
p
= 940 nm
l
Good spectral matching to si-photodetector
l
Radiant angle : 16°
Absolute Maximum Ratings
@ T
A
=25
o
C
A
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/17/2000
Unity Opto Technology Co., Ltd.
Unit: mm (inches)
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
C
φ
5.05
(.200)
2.54NOM.
(.100)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
1.00MIN.
(.040)
A
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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