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參數資料
| 型號： | 534H4 |
| 英文描述： | Infrared Emitting Diodes (IRED) |
| 中文描述： | 紅外發光二極管（登記合格決定） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-534H4 is a GaAlAs infrared LED having a
peak wavelength at 850nm. It features ultra-high power,
high response speed and molded package with higher
radiant intensity. In addition to improving the S/N ratio
in applied optical systems, the MIE-534H4 has greatly
improved long-distance characteristics as well as sign-
ificantly increased its range of applicability .
Features
l
Ultra-High radiant intensity
l
High response speed
l
Standard T-1 3/4 (
φ
5mm) package
l
Peak wavelength
λ
P
=850 nm
l
Radiant angle : 30°
Application
l
Data communication
l
SIR
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/17/2000
'@ T
A
=25
o
C
Unity Opto Technology Co., Ltd.
φ
5.05
(.200)
2.54NOM.
(.100)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
1.00MIN.
(.040)
A
C
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
Unit: mm (inches)
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
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