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參數資料
| 型號： | 544A4 |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 紅外發光二極管（登記合格決定） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | 544A4 |
GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-544A4
Description
Package Dimensions
The MIE-544A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
φ
5mm) package, radiant angle : 40°
l
Peak wavelength
λ
P
=940 nm
l
Good spectral matching to si-photodetecto
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Peak Forward Current
1
A
Continuous Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/17/2000
φ
5.05
(.199)
Unity Opto Technology Co., Ltd.
Unit: mm(inch)
2.54 NOM.
(.100)
7.62
(.300)
1.00
(.039)
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
SEE NOTE 2
A
C
Notes :
1. Tolerance is ±0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
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