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參數資料
| 型號： | 556A4U |
| 英文描述： | Infrared Emitting Diodes (UL Listed) |
| 中文描述： | 紅外發光二極管（UL收錄） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 30K |
| 代理商： | 556A4U |
AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-556A4U is infrared emitting diodes in
GaAs technology with AlGaAs window coating
molded in pastel pink transparent package.
Package Dimensions
Features
l
High radiant power and high radiant intensity
l
Standard T-1 3/4 (
φ
5mm) package
l
Peak wavelength
λ
p
= 940 nm
l
Good spectral matching to si-photodetector
l
Radiant angle : 55°
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/17/2000
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package
@ T
A
=25
o
C
Unite: mm ( inches )
Unity Opto Technology Co., Ltd.
7.62
(.300)
1.00
(.040)
.50 TYP.
(.020)
23.4 0MIN.
(.920)
1.00MIN
(.040)
A
C
φ
5.05
(.200)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
2.54
(.100)
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