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參數資料
| 型號： | 5962-0151101TXC |
| 廠商： | Aeroflex Inc. |
| 英文描述： | UT9Q512K32 16Megabit SRAM MCM |
| 中文描述： | UT9Q512K32 16Megabit的SRAM億立方米 |
| 文件頁數： | 1/14頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 5962-0151101TXC |
FEATURES
q
25ns maximum (5 volt supply) address access time
q
Asynchronous operation for compatible with industry
standard 512K x 8 SRAMs
q
TTL compatible inputs and output levels, three-state
bidirectional data bus
q
Typical radiation performance
- Total dose: 50krads
- SEL Immune >80 MeV-cm
2
/mg
- LET
TH
(0.25) = >10 MeV-cm
2
/mg
- Saturated Cross Section (cm
2
) per bit, 5.0E-9
- <1E-8 errors/bit-day, Adams 90% geosynchronous
heavy ion
q
Packaging options:
- 68-lead dual cavity ceramic quad flatpack (CQFP) -
(weight 7.37 grams)
q
Standard Microcircuit Drawing 5962-01511
- QML T and Q compliant part
INTRODUCTION
The QCOTS
TM
UT9Q512K32 Quantified Commercial
Off-the-Shelf product is a high-performance 2M byte
(16Mbit) CMOS static RAM multi-chip module (MCM),
organized as four individual 524,288 x 8 bit SRAMs with a
common output enable. Memory expansion is provided by
an active LOW chip enable (En), an active LOW output
enable (G), and three-state drivers. This device has a power-
down feature that reduces power consumption by more than
90% when deselected
.
Writing to each memory is accomplished by taking chip
enable (En) input LOW and write enable (Wn) inputs LOW.
Data on the eight I/O pins (DQ
0
through DQ
7
) is then written
into the location specified on the address pins (A
0
through
A
18
). Reading from the device is accomplished by taking
chip enable (En) and output enable (G) LOW while forcing
write enable (Wn) HIGH. Under these conditions, the
contents of the memory location specified by the address
pins will appear on the I/O pins.
The input/output pins are placed in a high impedance state
when the device is deselected (En HIGH), the outputs are
disabled (G HIGH), or during a write operation (En LOW
and Wn LOW). Perform 8, 16, 24 or 32 bit accesses by
making Wn along with En a common input to any
combination of the discrete memory die.
Figure 1. UT9Q512K32 SRAM Block Diagram
512K x 8
512K x 8
512K x 8
512K x 8
DQ(31:24)
or
DQ3(7:0)
DQ(23:16)
or
DQ2(7:0)
DQ(15:8)
or
DQ1(7:0)
DQ(7:0)
or
DQ0(7:0)
G
A(18:0)
W3
E3
E2
E1
E0
W2
W1
W0
Standard Products
QCOTS
TM
UT9Q512K32 16Megabit SRAM MCM
Data Sheet
June, 2003
相關PDF資料 |
PDF描述 |
|---|---|
| 5962-0151101 | UT9Q512K32 16Megabit SRAM MCM |
| 5962-0151101QXC | UT9Q512K32 16Megabit SRAM MCM |
| 5962-01533 | 16Megabit SRAM MCM |
| 5962-8978503KZA | Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
| 5962-8981001PX | Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 5962-0151201VPA | 制造商:Texas Instruments 功能描述:MOSFET DRVR 1.5A 2-OUT High Speed Inv 8-Pin CDIP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 5962-01-512-1906 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 5962-01-512-4218 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 5962015127486 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 5962015131095 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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