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參數(shù)資料
| 型號(hào)： | 5962-9053801PA |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 封裝： | CERAMIC, DIP-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 168K |
| 代理商： | 5962-9053801PA |
UC1611
UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
QUAD SCHOTTKY DIODE ARRAY
1
www.ti.com
FEATURES
D Matched, Four-Diode Monolithic Array
D High Peak Current
D Low-Cost MINIDIP Package
D Low-Forward Voltage
D Parallelable for Lower VF or Higher IF
D Fast Recovery Time
D Military Temperature Range Available
DESCRIPTION
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55
°C to
125
°C environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0
°C to 70°C ambient
temperature range.
AVAILABLE OPTIONS
TT
Packaged Devices
TA = TJ
SOIC Wide (DW)
DIL (J)
DIL (N)
–55
°C to 125°C
UC1611DW
UC1611J
UC1611N
0
°C to 70°C
UC3611DW
UC3611J
UC3611N
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2001, Texas Instruments Incorporated
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