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參數資料
| 型號： | 5962-9684302VZA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.22 V, CDSO10 |
| 封裝： | CERAMIC, SOIC-10 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 186K |
| 代理商： | 5962-9684302VZA |
Original Creation Date: 11/07/96
Last Update Date: 06/03/02
Last Major Revision Date: 05/14/02
MNLM113-1-X REV 2A1
MICROCIRCUIT DATA SHEET
REFERENCE DIODE
General Description
The LM113 is a temperature compensated, low voltage reference diode.
It features
extremely-tight regulation over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature stability.
The diode is synthesized using transistors and resistors in a monolithic integrated
circuit. As such, it has the same low noise and long term stability as modern IC op amps.
Further, output voltage of the reference depends only on highly-predictable properties of
components in the IC; so they can be manufactured and supplied to tight tolerances.
The characteristics of this reference recommend it for use in bias-regulation circuitry,
in low-voltage power supplies or in battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of silicon-the energy-band gap voltage-makes it
useful for many temperature-compensation and temperature-measurement functions.
NS Part Numbers
LM113-1H-QMLV
LM113-1H-SMD
LM113-1WG-QMLV
LM113-1WG-SMD
Industry Part Number
LM113
Prime Die
LM113
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description
Temp ( C)
o
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
1
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