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參數資料
| 型號： | 5962G0151601VXA |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 OTPROM, 55 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 2.54 MM PITCH, CERAMIC, DIP-28 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 152K |
| 代理商： | 5962G0151601VXA |
1
Standard Products
UT28F64LV Radiation-Hardened 8K x 8 PROM
Data Sheet
August 2001
FEATURES
q Programmable, read-only, asynchronous, radiation-
hardened, 8K x 8 memory
-
Supported by industry standard programmer
q 55ns maximum address access time (-55 oC to
+125 oC)
q Three-state data bus
q Low operating and standby current
-
Operating: 50mA maximum @18.2 MHz
Derating: 1.5mA/MHz
-
Standby: 500
A maximum (post-rad)
q Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
-
Total dose: 1E6 rad(Si)
-
LETTH(0.25) ~ 100 MeV-cm
2/mg
-
SEL Immune >128 MeV-cm 2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
-
Memory cell LET threshold: >128 MeV-cm2/mg
q QML Q & V compliant part
-
AC and DC testing at factory
q Packaging options:
-
28-pin 100-mil center DIP (0.600 x 1.4)
-
28-lead 50-mil center flatpack (0.490 x 0.74)
q V
DD: 3.0 to 3.6volts
q Standard Microcircuit Drawing 5962-01516
PRODUCT DESCRIPTION
The UT28F64LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
8K x 8 programmable memory device. The UT28F64LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F64LV. The combination of radiation- hardness, fast
access time, and low power consumption make the UT28F64LV
ideal for high speed systems designed for operation in radiation
environments.
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
A(12:0)
CE
PE
OE
Figure 1. PROM Block Diagram
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