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參數資料
| 型號： | 5962R0052402VZA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 比較器 |
| 英文描述： | COMPARATOR, 4000 uV OFFSET-MAX, 200 ns RESPONSE TIME, CDSO10 |
| 封裝： | CERAMIC, SOIC-10 |
| 文件頁數： | 3/34頁 |
| 文件大小： | 1020K |
| 代理商： | 5962R0052402VZA |
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Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
V
OL
Low Level Output Voltage
+V
CC = 4.5V, -VCC = Gnd,
I
O = 8mA, ±VI = 0.5V,
V
ID = -6mV
0.4
V
1, 2, 3
+V
CC = 4.5V, -VCC = Gnd,
I
O = 8mA, ±VI = 3V,
V
ID = -6mV
0.4
V
1, 2, 3
I
O = 50mA, ±VI = 13V,
V
ID = -5mV
1.5
V
1, 2, 3
I
O = 50mA, ±VI = -14V,
V
ID = -5mV
1.5
V
1, 2, 3
I
CEX
Output Leakage Current
+V
CC = 18V, -VCC = -18V,
V
O = 32V
-1.0
10
nA
1
-1.0
500
nA
2
I
L
Input Leakage Current
+V
CC = 18V, -VCC = -18V,
+V
I = +12V, -VI = -17V
(Note 11)
-5.0
500
nA
1, 2, 3
+V
CC = 18V, -VCC = -18V,
+V
I = -17V, -VI = +12V
(Note 11)
-5.0
500
nA
1, 2, 3
+I
CC
Power Supply Current
6.0
mA
1, 2
7.0
mA
3
-I
CC
Power Supply Current
-5.0
mA
1, 2
-6.0
mA
3
ΔV
IO / ΔT
Temperature Coefficient Input
Offset Voltage
25°C
≤ T ≤ 125°C
-25
25
V/°C
2
-55°C
≤ T ≤ 25°C
-25
25
V/°C
3
Δ I
IO / ΔT
Temperature Coefficient Input
Offset Current
25°C
≤ T ≤ 125°C
-100
100
pA/°C
2
-55°C
≤ T ≤ 25°C
-200
200
pA/°C
3
I
OS
Short Circuit Current
V
O = 5V, t ≤ 10mS, -VI = 0.1V,
+V
I = 0V
(Note 10)
200
mA
1
(Note 10)
150
mA
2
(Note 10)
250
mA
3
+V
IO adj.
Input Offset Voltage (Adjustment) V
O = 0V, VI = 0V, RS = 50
5.0
mV
1
-V
IO adj.
Input Offset Voltage (Adjustment) V
O = 0V, VI = 0V, RS = 50
-5.0
mV
1
±A
VE
Voltage Gain (Emitter)
R
L = 600
(Note 6)
10
V/mV
4
(Note 6)
8.0
V/mV
5, 6
AC Parameters
SMD 5962L0052401
(Note 12)
The following conditions apply, unless otherwise specified. V
CC = ±15V, VCM = 0
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
tR
LHC
Response Time (Collector
Output)
V
OD(Overdrive) = -5mV,
C
L = 50pF, VI = -100mV
(Note 13)
300
nS
7, 8B
640
nS
8A
tR
HLC
Response Time (Collector
Output)
V
OD(Overdrive) = 5mV,
C
L = 50pF, VI = 100mV
(Note 13)
300
nS
7, 8B
500
nS
8A
11
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