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參數資料
| 型號： | 5962R9687301VXC |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 OTPROM, 35 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 0.100 INCH PITCH, CERAMIC, DIP-28 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 105K |
| 代理商： | 5962R9687301VXC |
1
Standard Products
UT28F64 Radiation-Hardened 8K x 8 PROM
Data Sheet
August 2001
FEATURES
q
Programmable, read-only, asynchronous, radiation-
hardened, 8K x 8 memory
-
Supported by industry standard programmer
q
35ns and 45ns maximum address access time (-55
o
C to
+125
o
C)
q
TTL compatible input and TTL/CMOS compatible output
levels
q
Three-state data bus
q
Low operating and standby current
-
Operating: 100mA maximum @28.6MHz
Derating: 3mA/MHz
-
Standby: 500
μ
A maximum (post-rad)
q
Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
-
-
Total dose: 1E6 rad(Si)
LET
TH
(0.25) ~ 100 MeV-cm
2
/mg
- SEL Immune >128 MeV-cm
2
/mg
- Saturated Cross Section cm
2
per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
-
Memory cell LET threshold: >128 MeV-cm
2
/mg
q
QML Q & V compliant part
-
AC and DC testing at factory
q
Packaging options:
-
28-pin 100-mil center DIP (0.600 x 1.4)
-
28-lead 50-mil center flatpack (0.490 x 0.74)
q
V
DD
: 5.0 volts
+
10%
q
Standard Microcircuit Drawing 5962-96873
PRODUCT DESCRIPTION
The UT28F64 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
8K x 8 programmable memory device. The UT28F64 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F64.
The combination of radiation- hardness, fast access time, and low
power consumption make the UT28F64 ideal for high speed
systems designed for operation in radiation environments.
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
A(12:0)
CE
PE
OE
Figure 1. PROM Block Diagram
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